Method of manufacturing suspension structure and chamber

Details Method of manufacturing suspension structure and chamber Method of manufacturing suspension structure and chamber

2008-07-01

2008-07-01

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S706000, C257SE21170, C257SE21226, C257SE21334, C257SE21577

Reexamination Certificate

active

07393784

ABSTRACT:
A method of manufacturing a suspension structure including providing a substrate, forming a hole and a sacrificial layer filling the hole on the substrate, forming a patterned photoresist layer on the substrate and the sacrificial layer, the patterned photoresist layer exposing a part of the substrate and the sacrificial layer, forming a structure layer on the substrate, the patterned photoresist layer, and the sacrificial layer, performing a lift off process to remove the patterned photoresist layer and the structure layer above the photoresist pattern, and performing a dry etch process to remove the sacrificial layer in order to make the structure layer and the hole become the suspension structure and the chamber.

REFERENCES:
patent: 5071510 (1991-12-01), Findler et al.
patent: 5110373 (1992-05-01), Mauger
patent: 5354695 (1994-10-01), Leedy
patent: 2007/0298613 (2007-12-01), Kang

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