Method of manufacturing surface type acceleration sensor method

Details Method of manufacturing surface type acceleration sensor method Method of manufacturing surface type acceleration sensor method

1996-03-29

1997-09-09

Powell, William

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

216 62, 216 87, 216 2, 438960, H01L 2100

Patent

active

056652500

ABSTRACT:
A surface type acceleration sensor includes a p-type single crystal silicon base plate, a cantilever functioning as a cantilever structure portion, and a plurality of strain gauges. The cantilever is disposed in a recess portion formed on the front face of the p-type single crystal silicon base plate so that the cantilever can be displaced in the upward and downward direction. The cantilever includes an epitaxial growth layer principally made of n-type single crystal silicon. The strain gauge is made of p-type silicon and formed on an upper face of the base end portion of the cantilever.

REFERENCES:
patent: 5232866 (1993-08-01), Beyer et al.
patent: 5242863 (1993-09-01), Xiang-Zheng et al.

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