Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Patent
1995-05-19
1997-04-01
Fourson, George
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
438766, 438476, H01L 2176
Patent
active
056165072
ABSTRACT:
A polysilicon layer is formed on a surface of a silicon substrate after oxygen ions are implanted into the silicon substrate and an SiO.sub.2 film is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon substrate. A heat treatment is performed to a silicon layer between the polysilicon layer and the SiO.sub.2 film, thereby providing an SOI layer with improved crystal quality.
REFERENCES:
U. Bussmann et al., "Silicon-on-insulator device islands formed by oxygen implantation through patterned masking layers," Journal of Applied Physics, vol. 70, No. 8, Oct. 15, 1991, pp. 4584-4592.
N. Guillemot et al., "Suppression of oxidation stacking faults in silicon separation by oxygen," Materials Science & Engineering B12, Jan. 20, 1992, pp. 47-51.
J. R. Davis et al., "Dielectrically isolated silicon-on-insulator islands by masked oxygen implantation," Applied Physics Letters, vol. 51, No. 18, Nov. 2, 1987 pp. 1491-1421.
"Dislocation Formation Related with High Oxygen Dose Implantation on Silicon," by J. Stoemenos et al., J. Appl. Phys., vol. 69, No. 2, Jan. 15, 1991, pp. 793-802.
"The Reduction of Dislocations in Oxygen Implanted Silicon-On-Insulator Layers by Sequential Implantation and Annealing," by Dale Hill et al., J. Appl. Phys., vol. 63, No. 10, May 15, 1988, pp. 4933-4936.
"Formation of Low Dislocation Density Silicon-On-Insulator by a Single Implantation and Annealing," by M. K. EL-Ghor et al., Appl. Phys. Lett., vol. 57, No. 2, Jul. 9, 1990, pp. 156-158.
"The Effect of 1300-1380.degree.C Anneal Temperatures and Material Contamination on the Characteristics of CMOS/SIMOX Devices," L. Jastrzebski et al., IEEE Electron Device Letters, vol. 9, No. 3, Mar. 1988, pp. 151-153.
Nakai Tetsuya
Nishimura Tadashi
Yamaguchi Yasuo
Fourson George
Mitsubishi Denki & Kabushiki Kaisha
Mitsubishi Materials Corporation
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