Method of manufacturing structured epitaxial layers on a substra

Details Method of manufacturing structured epitaxial layers on a substra Method of manufacturing structured epitaxial layers on a substra

1987-02-02

1988-10-18

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156628, 20419215, 2041923, 20419235, C23C 1434

Patent

active

047785802

ABSTRACT:
A method of manufacturing structured epitaxial layers is discribed having monocrystalline layer regions adjacent to layer regions of a different order situated on a monocrystalline substrate whose crystal lattice is disturbed in locally bounded surface regions. A lattice disorder is formed with, the layers being manufactured by means of RF cathode sputtering (sputter epitaxy) in an inert gas plasma, and making use of a target containing the elements which contribute in the form of phases with an almost identical sputtering rate to the formation of the layer.

REFERENCES:
patent: 4314894 (1982-02-01), Schmelzer et al.
patent: 4347112 (1982-08-01), Togami
patent: 4608142 (1986-08-01), Gomi et al.
patent: 4684454 (1987-08-01), Gardner

Affiliated with

Also associated with

Rating

Method of manufacturing structured epitaxial layers on a substra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing structured epitaxial layers on a substra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing structured epitaxial layers on a substra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1193528