Method of manufacturing storage nodes of a semiconductor...

Details Method of manufacturing storage nodes of a semiconductor... Method of manufacturing storage nodes of a semiconductor...

2005-06-07

2005-06-07

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S745000, C438S672000, C438S637000

Reexamination Certificate

active

06903024

ABSTRACT:
A method and semiconductor memory device are provided for manufacturing storage nodes using wet etching and dry etching including, when removing a silicon oxide layer including storage nodes, wet etching a portion of the silicon oxide layer using a buffered oxide etchant (“BOE”) solution or a hydrogen fluoride (“HF”) solution, and dry etching the remaining silicon oxide layer using a mixed gas of anhydrous HF, isopropyl alcohol (“IPA”) and vapor to thereby prevent short circuits caused by fallen storage nodes in the semiconductor memory device.

REFERENCES:
patent: 6500763 (2002-12-01), Kim et al.
patent: 98-20704 (1998-06-01), None
Korean Publication with English Abstract.

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