Method of manufacturing stack-type capacitor and...

Details Method of manufacturing stack-type capacitor and... Method of manufacturing stack-type capacitor and...

2011-01-25

2011-01-25

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S557000, C438S650000, C438S686000, C257SE21351

Reexamination Certificate

active

07875525

ABSTRACT:
A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer filled in the first metal layer. In the capacitor, an amount of oxygen included in the lower electrode is decreased to suppress oxidation of a TiN layer. Thus, a stable stack-type capacitor may be formed, which increases greatly the performance of highly integrated DRAMs.

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