Method of manufacturing solid-state image sensing device

Details Method of manufacturing solid-state image sensing device Method of manufacturing solid-state image sensing device

2004-08-05

2008-03-25

Chea, Thorl (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S316000, C430S319000, C430S323000, C257S294000

Reexamination Certificate

active

07348133

ABSTRACT:
The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.

REFERENCES:
patent: 2003/0168678 (2003-09-01), Konishi
patent: 9-27608 (1997-01-01), None
patent: 2000-091548 (2000-03-01), None

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