Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1994-11-25
1995-10-03
Fourson, George
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01G 915
Patent
active
054541476
ABSTRACT:
The invention provides a method of manufacturing a solid electrolytic capacitor, including the steps of forming an oxide film serving as dielectric substance around a porous compact composed of valve action metal having an anode lead projecting therefrom, forming a resist layer around the anode lead and on a portion of the porous compact disposed in the vicinity of the anode lead, forming a conducting polymer compound layer on both the resist layer and the oxide film, and removing concurrently the resist layer and a part of the conducting polymer compound layer disposed on the resist layer. For instance, when the resist layer is composed of glass, the resist layer is removed by applying mechanical impact thereto.
REFERENCES:
patent: 5099398 (1992-03-01), Kurahayashi et al.
Arai Satoshi
Fukaumi Takashi
Kobayashi Atsushi
Kono Takashi
Nishiyama Toshihiko
Bilodeau Thomas G.
Fourson George
NEC Corporation
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