Method of manufacturing SOI wafer and thus-manufactured SOI...

Details Method of manufacturing SOI wafer and thus-manufactured SOI... Method of manufacturing SOI wafer and thus-manufactured SOI...

2011-03-08

2011-03-08

Gurley, Lynne A (Department: 2811)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000, C257S347000, C257SE21320

Reexamination Certificate

active

07902042

ABSTRACT:
A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1of SiO2as 1.5, refractive index n2of Si as 3.5, and optical thickness tOPof the silicon oxide film2and the SOI layer15in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1of the silicon oxide film2and thickness t2of the SOI layer so as to satisfy a relation of 0.1λ<tOP<2λ, and so as to make (t1×n1)/(t2×n2) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1×109/cm3. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.

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