Method of manufacturing SOI substrate

Details Method of manufacturing SOI substrate Method of manufacturing SOI substrate

2011-03-01

2011-03-01

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S149000, C438S370000, C438S402000, C438S407000, C438S473000, C257S317000, C257S318000, C257S319000, C257SE21120, C257SE21563, C257SE21568

Reexamination Certificate

active

07897476

ABSTRACT:
To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.

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