Method of manufacturing single-crystal silicon

Details Method of manufacturing single-crystal silicon Method of manufacturing single-crystal silicon

1992-04-30

1993-12-07

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566181, 1566204, 156DIG83, 156DIG102, 156DIG103, C30B 2906

Patent

active

052680630

ABSTRACT:
A single crystal silicon is prepared by constructing a silicon melt reservoir of an induction coil coated on its internal surface with a layer of a high melting point insulating material and placing silicon raw material in the reservoir, heating the silicon raw material by application of an external heating means and by current applied to the induction coil which electromagnetically heats the silicon thereby forming a pool of molten silicon in the reservoir, actively cooling said induction coil, and drawing up a single crystal silicon rod from the molten silicon in the melt reservoir.

REFERENCES:
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4224100 (1984-09-01), Hartzell
patent: 4361114 (1982-11-01), Gurev
patent: 4515755 (1985-05-01), Matsuo et al.
patent: 4874458 (1989-10-01), Nishizawa
patent: 4915723 (1990-04-01), Kaneko et al.
patent: 5211802 (1993-05-01), Kaneko et al.

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