Method of manufacturing single-crystal silicon

Details Method of manufacturing single-crystal silicon Method of manufacturing single-crystal silicon

1991-04-12

1993-06-29

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156600, 156601, 1566171, 1566181, 1566191, 156DIG64, 156DIG102, 156DIG103, C30B 1500

Patent

active

052230775

ABSTRACT:
A single crystal silicon is prepared by providing a silicon melt reservoir formed of an induction coil coated on its internal surfaces with a high melting insulating material which is subjected to an electromagnetic field which heats silicon placed in said melt reservoir, melting silicon in the melt reservoir by the application of the electromagnetic field and simultaneously depositing a scull layer of silicon on the inner surface of said reservoir, and pulling up a single crystal silicon rod from the silicon melt in the melt reservoir.

REFERENCES:
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4224100 (1980-09-01), Hartzell
patent: 4361114 (1982-11-01), Gurev
patent: 4515755 (1985-05-01), Matsuo et al.
patent: 4874458 (1989-10-01), Nishizawa

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