Method of manufacturing single-crystal film

Details Method of manufacturing single-crystal film Method of manufacturing single-crystal film

1982-09-24

1985-02-12

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617R, 156DIG80, 156DIG111, C30B 2504

Patent

active

044989512

ABSTRACT:
The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.

REFERENCES:
patent: 4174217 (1979-11-01), Flatley
patent: 4292091 (1981-09-01), Togei
patent: 4308078 (1981-12-01), Cook
patent: 4323417 (1982-04-01), Lam
patent: 4330363 (1982-05-01), Biecesen et al.
patent: 4338139 (1982-07-01), Shinada
patent: 4377031 (1983-03-01), Goto et al.
H. W. Lam et al., Single Crystal Silicon-On-Oxide by a Scanning CW Laser Induced Lateral Seeding Process, J. Electrochemical Soc. Solid-State Science and Technology, Sep. 1981, pp. 1981-1986.

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