Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-06-09
1992-05-05
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG68, 423446, 427 39, 204174, C30B 2904
Patent
active
051104059
ABSTRACT:
A method of manufacturing single-crystal diamond particles, according to the present invention, comprises the steps of introducing a reaction gas containing at least one organic compound into a reaction vessel having an anode and a cathode, producing a plasma by DC discharge caused between the anode and the cathode, and vibrating inorganic single-crystal particles in the plasma and depositing single-crystal diamond on the surface of the single-crystal particles. According to the method of the present invention, single-crystal diamond particles can be manufactured at high growth rate and with excellent reproducibility.
REFERENCES:
patent: 3030188 (1962-04-01), Eversole
patent: 3630678 (1971-12-01), Gardner
patent: 3661526 (1972-05-01), Angus et al.
patent: 3749760 (1973-07-01), Deryagin et al.
patent: 4228142 (1980-10-01), Holcombe et al.
patent: 4767608 (1988-08-01), Matsumoto et al.
patent: 4816286 (1989-03-01), Hirose
patent: 4830702 (1989-05-01), Singh et al.
Applied Physics Letters, K. Suzuki, A. Sawave, D. Yasuda and T. Imuka, vol. 50 (1987), pp. 728-729.
Inuzuka Tadao
Sawabe Atsuhito
Kabushiki Kaisha Toshiba
Kunemund Robert
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