Method of manufacturing silicon single crystal and silicon...

Details Method of manufacturing silicon single crystal and silicon... Method of manufacturing silicon single crystal and silicon...

2007-04-24

2007-04-24

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S019000, C117S020000

Reexamination Certificate

active

10769367

ABSTRACT:
A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz crucible for storing a silicon melt at a predetermined rotation speed and rotating the ingot pulled from the silicon melt in the opposite direction to the rotation of the quartz crucible at a predetermined rotation speed. An average rotation speed CRTAVof the quartz crucible during the pulling of a top ingot portion is set to be faster than an average rotation speed CRTAVof the quartz crucible during the pulling of a bottom ingot portion of the silicon single crystal ingot.

REFERENCES:
patent: 5593498 (1997-01-01), Kimbel et al.
patent: 5766341 (1998-06-01), Kimbel et al.
patent: 6045610 (2000-04-01), Park et al.
patent: 11-1393 (1999-01-01), None

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