Method of manufacturing silicon nanowires and device...

Details Method of manufacturing silicon nanowires and device... Method of manufacturing silicon nanowires and device...

2006-05-31

2009-12-29

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C977S762000, C977S778000, C977S780000, C977S784000, C977S785000, C977S932000, C977S949000, C257SE51026, C257SE33054

Reexamination Certificate

active

07638345

ABSTRACT:
A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.

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