Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

2006-07-18

2006-07-18

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S796000, C438S931000, C257S077000, C257SE31046

Reexamination Certificate

active

07078329

ABSTRACT:
An insulating film (2) is formed on a semiconductor substrate (1) formed of silicon carbide. A contact hole (3) is formed in the insulating film (2) to expose a part of the upper surface of the semiconductor substrate (1). Then, nickel (Ni) (4′) is formed above the semiconductor substrate (1). Subsequently, the semiconductor substrate (1) is subjected to a heat treatment, whereby the contact portion of nickel (4′) chemically bonds with the semiconductor substrate (1) to become an alloy layer (4) of silicon carbide and nickel. Nickel (4′) on the insulating film (2) is selectively removed by etching liquid for dissolving the nickel.

REFERENCES:
patent: 5442200 (1995-08-01), Tischler
patent: 6020248 (2000-02-01), Zenke
patent: 6110813 (2000-08-01), Ota et al.
patent: 6833562 (2004-12-01), Tanimoto et al.
patent: 2005/0205941 (2005-09-01), Tanimoto
patent: A-10-125620 (1998-05-01), None
patent: A-2000-12846 (2000-01-01), None
patent: 2003-243654 (2003-08-01), None
patent: WO 01/84609 (2001-11-01), None

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