Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

2011-04-05

2011-04-05

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C257SE21056

Reexamination Certificate

active

07919403

ABSTRACT:
A method of manufacturing a silicon carbide semiconductor device is provided that includes a step of forming in a surface of a silicon carbide wafer of first conductivity type a first region of second conductivity type having a predetermined space thereinside by ion-implanting aluminum as a first impurity and boron as a second impurity; a step of forming a JTE region in the surface of the silicon carbide wafer from the first region by diffusing the boron ion-implanted in the first region toward its neighboring zones by an activation annealing treatment; a step of forming a first electrode on the surface of the silicon carbide wafer at the space inside the first region and at an inner part of the first region; and a step of forming a second electrode on the opposite surface of the silicon carbide wafer. Thereby, a JTE region can be formed that has a wide range of impurity concentration and a desired breakdown voltage without increasing the number of steps of the manufacturing process.

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U.S. Appl. No. 12/621,963, filed Nov. 19, 2009, Tarui.

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