Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

2011-01-11

2011-01-11

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S931000, C257SE21085

Reexamination Certificate

active

07867882

ABSTRACT:
A method of manufacturing an SiC semiconductor device includes the steps of ion implanting a dopant at least in a part of a surface of an SiC single crystal, forming an Si film on the surface of the ion-implanted SiC single crystal, and heating the SiC single crystal on which the Si film is formed to a temperature not less than a melting temperature of the Si film.

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Tsuji Takashi, Translation of JP 2000-012482, Jan. 14, 2000.
Tsuji Takashi, Translation of JP 11-135450, May 21, 1999.
Seki Akinori, Translation of JP 2004-172556, Jun. 17, 2004.

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