Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-08-09
2011-08-09
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S044000, C438S222000, C438S666000, C438S903000, C438S969000, C257S592000, C257S665000, C257S734000, C257SE21135, C257SE23141
Reexamination Certificate
active
07994017
ABSTRACT:
A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.
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Bertilsson Kent
Harris Christopher
Konstantinov Andrei
Cree Inc.
Smith Matthew
Swanson Walter H
Withrow & Terranova, P.L.L.C.
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