Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-11
2008-11-25
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S664000, C438S682000, C257SE21165, C257SE21627, C257SE21641
Reexamination Certificate
active
07456096
ABSTRACT:
It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSi2layer through annealing; forming a Ni layer on the NiSi2layer; and silicidating the NiSi2layer through annealing.
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Aoki Nobutoshi
Kato Koichi
Kinoshita Atsuhiro
Koga Junji
Ohuchi Kazuya
Fourson George
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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