Method of manufacturing sensor

Details Method of manufacturing sensor Method of manufacturing sensor

1996-04-02

1997-04-01

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

73777, 438739, 438459, 438 52, H01L 21306

Patent

active

056165234

ABSTRACT:
A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.

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K.E. Petersen, IEEE Proceedings 70(1982)443 "Si as Mechanical Mat. : Thin Cantelever Beams".

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