Method of manufacturing semiconductor wafers

Details Method of manufacturing semiconductor wafers Method of manufacturing semiconductor wafers

1997-12-16

1999-05-04

Picardat, Kevin M.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, H01L 21302

Patent

active

058997440

ABSTRACT:
There is disclosed a method of manufacturing a semiconductor wafer which includes at least a slicing process for slicing a semiconductor monocrystalline ingot in order to obtain a disc-shaped semiconductor wafer. In the method, the sliced semiconductor wafer is etched before being transported to a subsequent process. Even when a monocrystalline ingot having a large diameter is sliced through use of a wire saw, the method prevents generation of breakage, cracks, chips, or the like in processes subsequent to the slicing process, thereby enabling production of large-diameter wafers with high productivity and high yield through utilization of the advantage of the wire saw in slicing a large-diameter monocrystalline ingot; i.e., high cutting speed and a small amount of slicing stock removal.

REFERENCES:
patent: 4276114 (1981-06-01), Takano et al.
patent: 5447890 (1995-09-01), Kato et al.
patent: 5494862 (1996-02-01), Kato et al.
patent: 5516706 (1996-05-01), Kusakabe
patent: 5747364 (1998-05-01), Akiyama et al.
patent: 5800725 (1998-09-01), Kato et al.

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