Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-12-12
1998-10-13
Niebling, John
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, H01L 21302
Patent
active
058211667
ABSTRACT:
method of manufacturing semiconductor wafers, which can prevent the pendent surface phenomenon during the mirror polishing of the wafers and can enhance the flatness of the mirror polished surfaces. The method of manufacturing semiconductor wafers according to this invention includes slicing ingots into wafers, chamfering the peripheral edge portions of the wafers, lapping the sliced surfaces of the wafers, grinding the lapped surfaces of the wafers to form a gradual concave shape, mirror polishing the ground surfaces of the wafers, and finally cleaning the mirror polished wafers.
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Hajime Hirofumi
Yubitani Toshiharu
Komatsu Electronic Metals Co. Ltd.
Lebentritt Michael S.
Niebling John
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