Method of manufacturing semiconductor wafer, semiconductor wafer

Details Method of manufacturing semiconductor wafer, semiconductor wafer Method of manufacturing semiconductor wafer, semiconductor wafer

1997-03-27

1998-11-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

438478, 148175, 117 90, H01L 2120

Patent

active

058343636

ABSTRACT:
There is disclosed a method of manufacturing a semiconductor wafer which has a dopant evaporation preventive film formed on one of main surfaces thereof, wherein a film serving as the dopant evaporation preventive film is formed on the one of the main surface by a plasma CVD method. There is also disclosed a method of manufacturing a semiconductor wafer having a plasma CVD film on one of main surfaces, wherein the plasma CVD film is formed on the one of the main surfaces of the semiconductor wafer so that a stress between the plasma CVD film and the semiconductor wafer falls in a range of 1.times.10.sup.8 -1.times.10.sup.9 dyne/cm.sup.2. Finally, a semiconductor wafer is disclosed having a plasma CVD film formed on only one face that serves as a barrier to autodoping during processing and which may function to create within the semiconductor wafer a strained layer that can getter impurities.

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EPO European Search Report Dated Jun. 18, 1998.
R. Reif et al., Plasma Enhanced Chemical Vapor Deposition, in Thin Film Processes II edited by J. Vossen et al., Academic Press, pp. 537-541 (no month available), 1991.

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