Method of manufacturing semiconductor thin film

Details Method of manufacturing semiconductor thin film Method of manufacturing semiconductor thin film

2007-12-05

2011-12-20

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S482000, C438S486000, C438S487000, C438S488000, C257SE21134, C257SE21347, C257SE21412, C257SE21572

Reexamination Certificate

active

08080450

ABSTRACT:
On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ
)×0.95 to (λ
)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ
)×0.95 to (λ
)×1.05 inclusive.

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