Method of manufacturing semiconductor substrate having total and

Details Method of manufacturing semiconductor substrate having total and Method of manufacturing semiconductor substrate having total and

1997-04-14

1998-09-01

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438295, H01L 2176

Patent

active

058010807

ABSTRACT:
According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.

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A High Speed and Low Power Consumption 16 K Gate Gate Array on Ultra Thin SOI Film, Institute of Electronics, Information and Communication Engineers of Japan, Y. Yamaguchi et al., pp. 81-86, 1992.

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