Method of manufacturing semiconductor probe having resistive...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S052000, C438S020000, C438S738000

Reexamination Certificate

active

07419843

ABSTRACT:
A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

REFERENCES:
patent: 5595942 (1997-01-01), Albrecht et al.
patent: 6423239 (2002-07-01), Cathey et al.
patent: 7008811 (2006-03-01), Park et al.
patent: 7141999 (2006-11-01), Park et al.
patent: 2003/0119220 (2003-06-01), Mlcak et al.
patent: 2005/0167724 (2005-08-01), Choi et al.
patent: 2006/0094241 (2006-05-01), Park et al.
patent: 2006/0252172 (2006-11-01), Park et al.

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