Method of manufacturing semiconductor memory device

Details Method of manufacturing semiconductor memory device Method of manufacturing semiconductor memory device

2007-05-04

2010-02-02

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S634000, C438S648000, C438S740000, C438S744000, C438S757000, C257SE21029, C257SE21252, C257SE21486, C257SE21577, C257SE21579

Reexamination Certificate

active

07655562

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed. In the method of manufacturing the semiconductor device, a first insulating layer is formed on a semiconductor substrate. A metal line layer and an etch-stop layer are formed over the first insulating layer. The etch-stop layer and the metal line layer are patterned to form a metal line. A second insulating layer is formed on the first insulating layer and the etch-stop layer. A first etch process for etching part of the second insulating layer is performed by using a first etch gas so that the etch-stop layer is exposed. A second etch process for removing the etch-stop layer is performed by using a second etch gas so that the metal line is exposed.

REFERENCES:
patent: 6037199 (2000-03-01), Huang et al.
patent: 6500357 (2002-12-01), Luo et al.
patent: 6537923 (2003-03-01), Bhatt et al.
patent: 10-2003-0095565 (2003-12-01), None
patent: 10-2005-0037712 (2005-04-01), None
patent: 10-2006-0001113 (2006-01-01), None

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