Method of manufacturing semiconductor light emitting device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Reexamination Certificate

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C257SE21090

Reexamination Certificate

active

08053263

ABSTRACT:
A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing an n-GaN layer on the plurality of GaN rods.

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Kazuhide Kusakabe, et al.. “Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy”, The Japan Society of Applied Physics, vol. 40, pp. L192-L194 (2001).
Srinivasan Raghavan, et al.,Growth Stresses and cracking in GaN films on(1 1 1)Si grown by metalorganic chemical vapor deposition. II. Graded AIGaN buffer layers,Journal of Applied Physics, 98, 023515 (2005).
C.K. Inoki, et al.Growth of GaN on porpus SiC and GaN substrates,Phys. Stats, Sol. (a) 200, 44 (2003).

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