Method of manufacturing semiconductor light emitting device

Details Method of manufacturing semiconductor light emitting device Method of manufacturing semiconductor light emitting device

2007-04-24

2007-04-24

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Dopant introduction into semiconductor region

C438S046000, C438S047000, C438S503000, C438S505000, C257S094000, C257S095000, C257S096000, C257S097000, C257S201000

Reexamination Certificate

active

11008484

ABSTRACT:
A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding layer, an etching stop layer, and a second conductive type second cladding layer on a substrate; a process of forming a ridge groove for forming a ridge; and a process of forming a current-flow barrier layer in the ridge groove. The process of forming ridge grooves has first and second anisotropic etching processes of performing anisotropic etching, an etching-mask forming process, and an isotropic etching process of performing anisotropic etching.

REFERENCES:
patent: 5101246 (1992-03-01), Onodera
patent: 6072819 (2000-06-01), Shakuda
patent: 6238947 (2001-05-01), Shakuda
patent: 6399407 (2002-06-01), O'Brien et al.
patent: 6711191 (2004-03-01), Kozaki et al.
patent: 6777258 (2004-08-01), Hunter

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3737828