Method of manufacturing semiconductor laser diode using self ali

Details Method of manufacturing semiconductor laser diode using self ali Method of manufacturing semiconductor laser diode using self ali

1994-10-21

1995-12-12

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437126, H01L 2120

Patent

active

054749549

ABSTRACT:
A manufacturing method of a semiconductor laser diode is disclosed in which a current cutoff layer is formed on the wall of a first metal layer by a low-temperature process such as plasma-enhanced chemical vapor deposition and the gas composition ratio of the reactive ion etching process is appropriately controlled so that the maximum area can be secured for a self-aligned first metal exposing area, i.e., an ohmic contact area. This minimizes the generation of heat during lasing and enhances reliability. Further, the present invention stabilizes the process by self alignment.

REFERENCES:
patent: 5256580 (1993-10-01), Gaw et al.
patent: 5288659 (1994-02-01), Koch et al.

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