Method of manufacturing semiconductor element

Details Method of manufacturing semiconductor element Method of manufacturing semiconductor element

2008-02-27

2010-10-05

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S514000

Reexamination Certificate

active

07807554

ABSTRACT:
A method of manufacturing a semiconductor element includes implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and irradiating the doped layer with a plurality of pulsed laser beams supplied by a plurality of laser irradiation devices to activate the doped layer and provide an activated doped layer. The activated doped layer may be one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different. Device breakage and failure of the manufactured semiconductor element due to heat induced during laser irradiation are substantially prevented by this method.

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