Method of manufacturing semiconductor devices with a reverse tap

Details Method of manufacturing semiconductor devices with a reverse tap Method of manufacturing semiconductor devices with a reverse tap

1997-05-09

1999-07-20

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

438700, 438701, 438739, 438503, 438341, H01L 21306

Patent

active

059267259

ABSTRACT:
In a method of manufacturing a semiconductor device, to form an opening in an insulation film such as a silicon oxide on a semiconductor substrate in a reverse tapered sectional configuration such that no gap is formed between a side surface of an epitaxial growth layer formed in the opening and the opening in the insulation film, the insulation film having the opening is subjected to a thermal process in an atmosphere of non-oxidizing gas including hydrogen elements such as hydrogen, silane or disilane gas. An opening is formed in the insulation film on the semiconductor substrate using isotropic etching. As a result of the above-described thermal process, decomposition of a silicon oxide proceeds from the interface between the insulation film and the semiconductor substrate at a side-wall of the opening to eventually form the opening in a reverse tapered sectional configuration at least in an edge portion thereof.

REFERENCES:
patent: 4579621 (1986-04-01), Hine
patent: 4675074 (1987-06-01), Wada et al.
patent: 5484507 (1996-01-01), Ames

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