Method of manufacturing semiconductor devices including...

Details Method of manufacturing semiconductor devices including... Method of manufacturing semiconductor devices including...

2011-01-18

2011-01-18

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S301000, C257SE21396, C257SE21651

Reexamination Certificate

active

07871891

ABSTRACT:
A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the first capacitor electrodes extending away from the semiconductor substrate. A plurality of capacitor support pads may be provided with each capacitor support pad being connected to first capacitor electrodes of at least two adjacent parallel lines of the first capacitor electrodes and with adjacent capacitor support pads being spaced apart. A dielectric layer may be provided on each of the first capacitor electrodes, and a second capacitor electrode may be provided on the dielectric layer so that the dielectric layer is between the second capacitor electrode and each of the first capacitor electrodes. Related methods are also discussed.

REFERENCES:
patent: 6445565 (2002-09-01), Toyoda et al.
patent: 6853023 (2005-02-01), Goebel et al.
patent: 7387939 (2008-06-01), Manning
patent: 2005/0054159 (2005-03-01), Manning et al.
patent: 2003-142605 (2003-05-01), None
patent: 100885922 (2009-02-01), None
Korean Notice to Submit Response and English Translation corresponding to Korean Patent Application No. 10-2007-0057995 (8 pages), Dated Mar. 21, 2008.

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