Method of manufacturing semiconductor devices comprising a...

Details Method of manufacturing semiconductor devices comprising a... Method of manufacturing semiconductor devices comprising a...

2006-09-26

2006-09-26

Barr, Michael (Department: 1746)

Semiconductor device manufacturing: process

Cleaning of reaction chamber

C438S787000, C438S791000, C134S001100, C134S022100

Reexamination Certificate

active

07112546

ABSTRACT:
The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing material layers on the substrate. The chamber has an interior surface. The method further includes, between the transfers, cleaning the deposition chamber using an in situ ramped cleaning process when material layer deposits in the deposition chamber reaches a predefined thickness. The in situ ramped cleaning process comprises forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber in a presence of a plasma. The cleaning process further includes ramping a flow rate of the gaseous fluorocompound in a presence of the plasma to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface.

REFERENCES:
patent: 5565038 (1996-10-01), Ashley

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