Method of manufacturing semiconductor devices by performing coat

Details Method of manufacturing semiconductor devices by performing coat Method of manufacturing semiconductor devices by performing coat

1997-11-13

2000-07-11

Nuzzolillo, Maria

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Processing feature prior to imaging

430330, 438758, G03C 500

Patent

active

060870761

ABSTRACT:
A method of manufacturing semiconductor devices includes a coating step for coating a substrate using a resist solution including a base resin and a low-oxygen or oxygen-free solvent in which oxygen is removed by nitrogen bubbling, a heating step for heating the substrate coated with the resist, an exposing step for exposing the substrate with radiation to transfer a pattern, and a developing step for developing the exposed substrate. The coating step, the heating step, the exposing step and the developing step are performed under an environment controlled in a low-oxygen or oxygen-free state.

REFERENCES:
patent: 5723259 (1998-03-01), Oikawa et al.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor devices by performing coat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor devices by performing coat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor devices by performing coat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-540582