Method of manufacturing semiconductor devices

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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07022599

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed. The method includes depositing an O3-TEOS oxide film having a good flow-like property under a high adhesive force in order to prevent degradation in the characteristic of the surface of a lower insulating film made of a PE-TEOS oxide film and generation of defect due to the topology difference. Therefore, the disclosed method can improve the electrical characteristic of a semiconductor device and the manufacturing yield.

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Office Action from the Taiwan Intellectual Property Office dated Apr. 19, 2005 (5 pages).
Office Action from Korean Intellectual Property Office dated Oct. 2, 2003 (2 pages).

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