Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-09-22
1998-06-16
Young, Christopher G.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430329, 1566521, 15655911, 15666111, 438221, 438761, 438787, G03C 500, G03F 736
Patent
active
057668230
ABSTRACT:
Buried type element separating trenches suitable for microminiaturization of semiconductor circuits can be formed. In addition, defects that generate electric field concentration and gate oxide film leakage due to the shape of the element separating trenches can be prevented effectively. The method of manufacturing a semiconductor device includes the steps of: forming a first material layer and a second material layer in sequence on a surface of a semiconductor substrate; forming a first opening on the first material layer and a second opening in the second material layer (the first opening being larger than the second opening); forming an element separating trench under the second opening in the substrate by using the second material layer as a mask; removing the second material layer; depositing a filling material on the element separating trench, the substrate and the first material layer; and etching back the filling material by using the first material layer as a stopper. In the above-mentioned process, the filling material remains over and about the element separating trench so as to cover the edge portion between the substrate surface and the separating trench, thus eliminating the edge portion which causes defects.
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Kabushiki Kaisha Toshiba
Young Christopher G.
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