Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1992-12-16

1994-12-13

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156660, 1566611, 156643, 156650, 156668, H01L 2100

Patent

active

053726774

ABSTRACT:
After a silicon nitride film (2) is etched by using a first resist pattern (3A) as a mask before coating a second resist (4) superposing on the first resist pattern (3A), a surface layer portion of the first resist pattern (3A) is subjected to a plasma treatment by using oxygen (O.sub.2). A properties changed layer in the surface layer portion of the first resist pattern (3A) is removed or modified to improve the adhesion between the second resist (4) and the first resist pattern (3A), and the stripping of the second resist (4) is prevented.

REFERENCES:
"Modification of Photoresist Surface-Involves Short Treatment in Oxygen Plasma to Remove Up to 100 Angstrom of Resist Surface to Improve Adhesion of Subsequent Coatings"; RD-310, 104-A; Feb. 10, 1990; Aron-Abstract Only.

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