Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-05-29
1999-10-05
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438158, 438159, 438160, 438 30, H01L 21331
Patent
active
059637978
ABSTRACT:
The present invention relates to a method for manufacturing TFTs in which a gate electrode is first formed on a transparent glass substrate by depositing and patterning a first metal layer. Next, a first insulating layer, a semiconductor layer, impurity-containing semiconductor layer and a second insulating layer are deposited over the first metal layer and the substrate surface. The insulating layer is patterned followed by deposition of a second metal layer. First portions of the second metal layer and the impurity-containing semiconductor layer along with part of the second insulating layer are etched over the gate electrode (thereby forming source and drain electrodes) at the same time second portions of the second metal layer and impurity-containing semiconductor layer and portions of the semiconductor layer laterally spaced from the gate electrode are etched. As a result, the number of etching steps is reduced, and the second insulating layer controls the etching speed.
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Brown Peter Toby
Guerrero Maria
LG Electronics Inc.
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