Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-10-04
1999-10-05
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
438759, 438706, 438761, 216 38, C23C 1434, C23C 1446
Patent
active
059617942
ABSTRACT:
A method of manufacturing semiconductor devices that provides excellent controllability and workability in planarizing the isolation area. The novel method comprises the steps of: forming a filling material on a semiconductor substrate formed with a plurality of trenches such that the plurality of trenches are filled up with the filling material; forming a mask having a pattern obtained by inverting a pattern of the plurality of trenches onto the surface of the filling material; etching the filling material to a predetermined depth by use of the mask to leave a protruding portion composed of the filling material on each of the plurality of trenches; and removing the mask and then the protruding portion for planarization.
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English Abstract of JP 5-102100, Apr. 23, 1993.
L.F. Johnson, "Planarization of patterned surfaces by ion beam erosion", Appl. Phys. Lett., 40(7), Apr. 1, 1982.
"Shallow Trench Isolation for Ultra-Large-Scale Integrated Devices", K. Blumenstock et al., J. Vac. Sci. Techol. B 12(1), Jan./Feb. 1994 pp. 54-57 .
NEC Corporation
Nguyen Nam
Ver Steeg Steven H.
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