Method of manufacturing semiconductor device without bird beak e

Details Method of manufacturing semiconductor device without bird beak e Method of manufacturing semiconductor device without bird beak e

1997-06-23

2000-03-21

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438218, 438262, H01L 21225, H01L 2176

Patent

active

060402342

ABSTRACT:
In a method of manufacturing a semiconductor device, diffusion layers are formed on a semiconductor substrate using a mask. The diffusion layers has a conductive type different from that of the semiconductor substrate. Then, insulating films are formed on the diffusion layers using the mask and the mask is removed. Subsequently, a floating gate is formed between the insulating films on the semiconductor substrate via a first gate insulating film. Next, a second gate insulating film is formed on the floating gate and the insulating films, and a word line is formed to cover the floating gate via the second gate insulating film.

REFERENCES:
patent: 4373248 (1983-02-01), McElroy
patent: 5256593 (1993-10-01), Iwai
"High Density Contactless Self Aligned Eprom Cell Array Technology" Esquivel et al.
Technical Digest of International Electron Devices Meeting, 1986; pp. 592-595.
"A New Process for Silica Coating" Nagayama et al.
Journal of Electrochemical Society, vol. 135,. No. 8, 1988; pp. 2013-2016.
"A New Interlayer FormatioN Technology for Completely Planarized Multilevel Interconnection by using LPD" Homma et al.
1990 Symposium on VLSI Technology, pp. 3-4.

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