Method of manufacturing semiconductor device with silicide layer

Details Method of manufacturing semiconductor device with silicide layer Method of manufacturing semiconductor device with silicide layer

1997-12-11

2000-09-26

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438305, 438683, H01L 213205, H01L 214763

Patent

active

061241903

ABSTRACT:
In a method of manufacturing a semiconductor integrated circuit, a gate structure with sidewall insulating films and a field oxidation film are formed on a semiconductor substrate. Then, diffusion layers are formed for the gate structure with the sidewall insulating films. Subsequently, a surface layer is removed from each of the sidewall insulating films and the field oxidation film. Next, a silicide layer is formed in a surface layer of each of the diffusion layers in self-alignment with the gate structure with the sidewall insulating films and the field oxidation film.

REFERENCES:
patent: 4855798 (1989-08-01), Imamura et al.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device with silicide layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device with silicide layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device with silicide layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2099663