Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1994-12-01
1997-04-22
Breneman, R. Bruce
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
117 84, 438492, 438571, H01L 21208
Patent
active
056228910
ABSTRACT:
A silicon nitride film 2 is formed on a GaAs substrate 1 and patterned to selectively expose the GaAS substrate surface in uniformly distributed areas having a width of not greater than 1 .mu.m. A non-doped GaAs buffer layer is grown on the GaAs substrate to completely cover the silicon nitride film. Then, a semiconductor multilayer structure including a non-doped GaAs layer is formed on the non-doped GaAs buffer layer. When a semiconductor integrated circuit device is manufactured using this semiconductor substrate, side gate effect can be effectively reduced due to the existence of the silicon nitride pattern and the buffer layer.
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Breneman R. Bruce
Fujitsu Limited
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