Method of manufacturing semiconductor device with reduced charge

Details Method of manufacturing semiconductor device with reduced charge Method of manufacturing semiconductor device with reduced charge

1997-09-29

1999-03-16

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438184, 438516, 438520, 438525, H01L 21338

Patent

active

058829610

ABSTRACT:
A semiconductor device (20) is fabricated by doping a dielectric layer (29) located over the surface of a semiconductor substrate (21). The dielectric layer (29) contains nitrogen and is doped with silicon ions by using an ion implantation process (15) such that a peak concentration (32) of the silicon ions remains in the dielectric layer (29) during the ion implantation process (15). Doping the dielectric layer (29) reduces charge trapping in the dielectric layer (29) and reduces power slump in the semiconductor device (20) during high frequency operation.

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