Method of manufacturing semiconductor device with gettering and

Details Method of manufacturing semiconductor device with gettering and Method of manufacturing semiconductor device with gettering and

1996-10-21

1999-02-23

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Gettering of semiconductor substrate

438402, 438439, 438476, H01L 21335

Patent

active

058743251

ABSTRACT:
The method of manufacturing a semiconductor device including the step of forming a silicon oxide film on an obverse surface and a reverse surface of a silicon substrate before formation of an element separation region on a semiconductor substrate. Further, the reverse surface of the silicon substrate is exposed by selectively removing only the silicon oxide film formed on the reverse surface of the silicon substrate. A silicon thin film is formed on each of the silicon oxide film and the exposed reverse surface of the silicon substrate, gettering occurring in the silicon thin film formed on the reverse surface of the silicon substrate. The first thin film is formed on each of the silicon thin films. An element separation resist is patterned on the first thin film on the obverse surface of the silicon substrate. The first thin film on the obverse surface of the silicon substrate by etching using the patterned resist as a mask member. An oxide film for an element separation region is formed, using the patterned first thin film as a mask.

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