Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-02
2009-06-09
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S257000, C438S263000, C438S264000, C438S587000, C438S594000, C257S316000, C257SE27103
Reexamination Certificate
active
07544613
ABSTRACT:
A method of manufacturing a semiconductor device including word lines of memory cells and a pair of select gate lines. A first insulating film, a first conductive film, a second insulating film, and a first resist are sequentially formed above a semiconductor substrate. The first resist includes first patterns formed in a first region above the second insulating film and having almost the same width and interval as those of the word lines, and second patterns formed in a second region adjacent to the first region above the second insulating film with a width substantially equal to the sum of the widths of the select gate lines and the interval of the select gate lines. The second and the first conductive films are patterned to form the word lines. A second resist is used to pattern the second insulating film and the first conductive film to form the select gate lines.
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Huynh Andy
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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