Method of manufacturing semiconductor device utilizing selective

Details Method of manufacturing semiconductor device utilizing selective Method of manufacturing semiconductor device utilizing selective

1995-11-07

1998-06-09

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438620, 438622, 438655, 438656, 438675, 438677, H01L 21283

Patent

active

057633215

ABSTRACT:
A method of manufacturing semiconductor devices, includes the step of forming a first conductive region of a first conductive material for effecting a growth of a conductive film thereon by a selective growth method. Also, a second conductive region of a second conductive material for not effecting a growth of a conductive film is formed in the selective growth method. An insulating layer is covered with the first and second conductive regions. Further, a through hole in the insulating layer for filling the hole with the conductive film is formed. The conductive film is grown within the through hole over the first conductive region, thereby filling the through hole with the conductive film.

REFERENCES:
patent: 4622735 (1986-11-01), Shibata
patent: 4902533 (1990-02-01), White
patent: 4966868 (1990-10-01), Murali et al.
patent: 5002902 (1991-03-01), Watanabe
patent: 5023201 (1991-06-01), Stanasolovich et al.
patent: 5192713 (1993-03-01), Harada
patent: 5204286 (1993-04-01), Doan
patent: 5286673 (1994-02-01), Nishihara
patent: 5324536 (1994-06-01), Yonehara

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