Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-10-29
1999-11-16
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430950, G03F 720
Patent
active
059855193
ABSTRACT:
A method of manufacturing a semiconductor device for patterning a semiconductor substrate by photolithography, the semiconductor substrate having a transparent or semitransparent layer having a high transmissivity at an exposure wavelength .lambda., and the transparent or semitransparent layer being formed on an underlying structure with a surface having a high reflectivity at the exposure wavelength .lambda.. The method comprises the steps of: forming a resist layer having a refractive index n.sub.r and a thickness d.sub.r on the transparent or semitransparent layer; forming a top antireflection film having a refractive index n.sub.a and a thickness d.sub.a on the resist layer; selectively exposing the resist layer via the top antireflection film with light having the exposure wavelength .lambda.; removing the top antireflection film; and developing a latent image in the resist layer to form a resist pattern, wherein an optical thickness n.sub.a d.sub.a of the top antireflection film and an optical thickness n.sub.r d.sub.r of the resist layer are selected so that a size change in the resist pattern becomes small even if the thickness of the transparent or semitransparent layer changes. This method provides an excellent size precision in patterning a transparent or semitransparent layer formed on a high reflectivity surface.
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Kakamu Yoko
Yanagishita Yuichiro
Duda Kathleen
Fujitsu Limited
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